| No. |
Part Name |
Description |
Manufacturer |
| 8071 |
JAN2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 8072 |
JAN2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 8073 |
JAN2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 8074 |
JDH2S01FS |
High frequency Schottky barrier diode |
TOSHIBA |
| 8075 |
JDH2S02FS |
High frequency Schottky barrier diode |
TOSHIBA |
| 8076 |
JDH2S02SC |
High frequency Schottky barrier diode |
TOSHIBA |
| 8077 |
JDH3D01FV |
High frequency Schottky barrier diode |
TOSHIBA |
| 8078 |
JDH3D01S |
High frequency Schottky barrier diode |
TOSHIBA |
| 8079 |
JDP2S02ACT |
Radio-frequency switching diode |
TOSHIBA |
| 8080 |
JDP2S05SC |
Radio-frequency switching diode |
TOSHIBA |
| 8081 |
JDP2S08SC |
Radio-frequency switching diode |
TOSHIBA |
| 8082 |
JDP2S12CR |
Radio-frequency switching diode |
TOSHIBA |
| 8083 |
JDP3C02AU |
Radio-frequency switching diode |
TOSHIBA |
| 8084 |
JDP3C04TU |
Radio-frequency switching diode |
TOSHIBA |
| 8085 |
JDP4P02AT |
Radio-frequency switching diode |
TOSHIBA |
| 8086 |
JH-140 |
500-1000 MHz, high-frequency quadrature hybrid |
MA-Com |
| 8087 |
JH-140 |
High-Frequency Quadrature Hybrid 500 - 1000 MHz |
Tyco Electronics |
| 8088 |
JH-140PIN |
High-Frequency Quadrature Hybrid 500 - 1000 MHz |
Tyco Electronics |
| 8089 |
JH-141 |
1000-2000 MHz, high-frequency quadrature hybrid |
MA-Com |
| 8090 |
JH-141 |
High-Frequency Quadrature Hybrid 1 - 2 GHz |
Tyco Electronics |
| 8091 |
JH-141PIN |
High-Frequency Quadrature Hybrid 1 - 2 GHz |
Tyco Electronics |
| 8092 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 8093 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 8094 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 8095 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 8096 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 8097 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 8098 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
| 8099 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
| 8100 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
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