| No. |
Part Name |
Description |
Manufacturer |
| 8101 |
STD129 |
NPN Silicon Transistor |
AUK Corp |
| 8102 |
STD13003 |
NPN Silicon Power Transistor |
AUK Corp |
| 8103 |
STD13003L |
NPN Silicon Power Transistor |
AUK Corp |
| 8104 |
STD13005F |
NPN Silicon Power Transistor |
AUK Corp |
| 8105 |
STD13005FC |
NPN Silicon Power Transistor |
AUK Corp |
| 8106 |
STD13007F |
NPN Silicon Power Transistor |
AUK Corp |
| 8107 |
STD13007FC |
NPN Silicon Power Transistor |
AUK Corp |
| 8108 |
STD1664 |
NPN Silicon Transistor |
AUK Corp |
| 8109 |
STD1766 |
NPN Silicon Transistor |
AUK Corp |
| 8110 |
STD1862 |
NPN Silicon Transistor |
AUK Corp |
| 8111 |
STD1862L |
NPN Silicon Transistor |
AUK Corp |
| 8112 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 8113 |
STD80N6F6 |
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 8114 |
STD882 |
NPN Silicon Transistor |
AUK Corp |
| 8115 |
STD882D |
NPN Silicon Transistor |
AUK Corp |
| 8116 |
STEVAL-IDS002V1 |
Autonomous wireless multi-sensor node powered by PV cells and based on SPV1050 (SPIDEr ™) |
ST Microelectronics |
| 8117 |
STEVAL-IDS003V1 |
Autonomous Wireless Multi-Sensor Node powered by thermoelectric generator and based on the SPV1050 (SPIDEr) |
ST Microelectronics |
| 8118 |
STEVAL-ISA096V1 |
Auxiliary power supply in buck-boost topology based on the Viper06 |
ST Microelectronics |
| 8119 |
STGB20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 8120 |
STGB35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 8121 |
STGB35N35LZ-1 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 8122 |
STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 8123 |
STGD10HF60KD |
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 8124 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| 8125 |
STGD20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 8126 |
STGP35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 8127 |
STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package |
ST Microelectronics |
| 8128 |
STH245N75F3-6 |
Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 8129 |
STH315N10F7-2 |
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET |
ST Microelectronics |
| 8130 |
STH315N10F7-6 |
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET |
ST Microelectronics |
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