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Datasheets for SISTOR

Datasheets found :: 34701
Page: | 267 | 268 | 269 | 270 | 271 | 272 | 273 | 274 | 275 |
No. Part Name Description Manufacturer
8101 80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
8102 8090 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz Infineon
8103 81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
8104 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
8105 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
8106 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
8107 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
8108 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
8109 81550M High power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
8110 81600M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
8111 81720-20 Transistor for communications applications SGS Thomson Microelectronics
8112 81922-18 Transistor for communications applications SGS Thomson Microelectronics
8113 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
8114 82023-10 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
8115 82023-16 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
8116 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8117 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8118 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8119 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8120 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
8121 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8122 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8123 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8124 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8125 82729-30 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
8126 82729-60 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
8127 82731-1 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
8128 82731-75 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
8129 82931-55 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
8130 82931-55N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics


Datasheets found :: 34701
Page: | 267 | 268 | 269 | 270 | 271 | 272 | 273 | 274 | 275 |



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