| No. |
Part Name |
Description |
Manufacturer |
| 811 |
MAX98500EWE+TC26 |
Boosted 2.2W Class D Amplifier with Automatic Level Control |
MAXIM - Dallas Semiconductor |
| 812 |
MAX98502 |
Boosted 2.2W Class D Amplifier with Automatic Level Control |
MAXIM - Dallas Semiconductor |
| 813 |
MAX98502EWE+ |
Boosted 2.2W Class D Amplifier with Automatic Level Control |
MAXIM - Dallas Semiconductor |
| 814 |
MAX98502EWE+T |
Boosted 2.2W Class D Amplifier with Automatic Level Control |
MAXIM - Dallas Semiconductor |
| 815 |
MERA-556 |
Surface Mount Dual Matched MMIC Amplifiers 50 High Dynamic Range DC to 2.2 GHz |
Mini-Circuits |
| 816 |
MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit |
Motorola |
| 817 |
MHW802-1 |
UHF power amplifier module 2.2W - 825-845MHz |
Motorola |
| 818 |
MHW802-2 |
UHF power amplifier module 2.2W - 890-915MHz |
Motorola |
| 819 |
MM1592C |
Low-saturation 300mA regulators 2.2V |
Mitsumi Electric |
| 820 |
MM3092C |
Low-ripple, low-saturation CMOS regulators, 2.2V |
Mitsumi Electric |
| 821 |
MM3102C |
Low-ripple, low-saturation CMOS regulators, 2.2V |
Mitsumi Electric |
| 822 |
MRF21030 |
MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 823 |
MTP2N35 |
N-Channel Power MOSFETs, 2.25A, 350-400V |
Fairchild Semiconductor |
| 824 |
MTP2N40 |
N-Channel Power MOSFETs, 2.25A, 350-400V |
Fairchild Semiconductor |
| 825 |
MTP3N60E |
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS |
Motorola |
| 826 |
MV1860A |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 2.2pF |
Motorola |
| 827 |
MV1860B |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 2.2pF |
Motorola |
| 828 |
MV1860D |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 2.2pF |
Motorola |
| 829 |
MZ4616 |
Zener diode, 500 mW, zener voltage 2.2V |
Motorola |
| 830 |
NTMD6601N |
80V 2.2A DUAL N-CHANNEL SO8 |
ON Semiconductor |
| 831 |
OPA2365-Q1 |
Automotive 2.2V, 50MHz, Low-Noise Single-Supply Rail-to-Rail Operational Amplifiers 8-SOIC -40 to 125 |
Texas Instruments |
| 832 |
OPA2365AQDRQ1 |
Automotive 2.2V, 50MHz, Low-Noise Single-Supply Rail-to-Rail Operational Amplifiers 8-SOIC -40 to 125 |
Texas Instruments |
| 833 |
OPA365-EP |
Enhanced Product 2.2V, 50MHz, Low-Noise, Single-Supply Rail-to-Rail Op Amp 5-SOT-23 -55 to 125 |
Texas Instruments |
| 834 |
OPA365-Q1 |
Automotive 2.2V, 50MHz, Low-Noise, Single-Supply Rail-to-Rail Operational Amplifier 5-SOT-23 -40 to 125 |
Texas Instruments |
| 835 |
OPA365AMDBVTEP |
Enhanced Product 2.2V, 50MHz, Low-Noise, Single-Supply Rail-to-Rail Op Amp 5-SOT-23 -55 to 125 |
Texas Instruments |
| 836 |
OPA365AQDBVRQ1 |
Automotive 2.2V, 50MHz, Low-Noise, Single-Supply Rail-to-Rail Operational Amplifier 5-SOT-23 -40 to 125 |
Texas Instruments |
| 837 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
| 838 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
| 839 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
| 840 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
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