| No. |
Part Name |
Description |
Manufacturer |
| 811 |
IR1153S |
One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), Fixed 22.2kHz switching frequency |
International Rectifier |
| 812 |
IR1153SPBF |
One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), Fixed 22.2kHz switching frequency |
International Rectifier |
| 813 |
IR1153STRPBF |
One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), Fixed 22.2kHz switching frequency |
International Rectifier |
| 814 |
IR1155S |
Adjustable Frequency One Cycle Control PFC IC |
International Rectifier |
| 815 |
IR1155SPBF |
Adjustable Frequency One Cycle Control PFC IC |
International Rectifier |
| 816 |
IR2085 |
High Speed 100V Self Oscillating 50% Duty Cycle Half Bridge Driver in a 8-Lead SOIC package |
International Rectifier |
| 817 |
IR2085S |
High Speed 100V Self Oscillating 50% Duty Cycle Half Bridge Driver in a SO-8 package |
International Rectifier |
| 818 |
IR2085SPBF |
HIGH SPEED/ 100V/ SELF OSCILLATING 50% DUTY CYCLE/ HALF-BRIDGE DRIVER |
International Rectifier |
| 819 |
IR2085STRPBF |
High Speed 100V Self Oscillating 50% Duty Cycle Half Bridge Driver in a 8-Lead SOIC package |
International Rectifier |
| 820 |
IR2086 |
High Speed 100V Self Oscillating 50% Duty Cycle Full Bridge High and Low Side Driver in a 16-lead SOIC package |
International Rectifier |
| 821 |
IR2086S |
HIGH SPEED/ 100V/ SELF OSCILLATING 50% DUTY CYCLE/ FULL-BRIDGE DRIVER |
International Rectifier |
| 822 |
IR2086STR |
High Speed 100V Self Oscillating 50% Duty Cycle Full Bridge High and Low Side Driver in a 16-lead SOIC package |
International Rectifier |
| 823 |
IRAC1155-300W |
300W One Cycle Control CCM PFC IC Demo Board |
International Rectifier |
| 824 |
ISL12030 |
Low Power RTC with 50/60 Cycle AC Input, Alarms and Daylight Savings Correction |
Intersil |
| 825 |
ISL12032 |
Low Power RTC with Battery Backed SRAM and 50/60 Cycle AC Input and Xtal Back-up |
Intersil |
| 826 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 827 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 828 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 829 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 830 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 831 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 832 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 833 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 834 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 835 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 836 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 837 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 838 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 839 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 840 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
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