No. |
Part Name |
Description |
Manufacturer |
811 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
812 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
813 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
814 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
815 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
816 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
817 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
818 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
819 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
820 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
821 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
822 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
823 |
ISPLSI5512VE-155LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
824 |
ISPLSI5512VE-155LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
825 |
ISPLSI5512VE-155LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
826 |
ISPLSI5512VE-155LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
827 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
828 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
829 |
ISPLSI5512VE-80LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
830 |
ISPLSI5512VE-80LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
831 |
ISPLSI81080V |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
832 |
ISPLSI81080V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
833 |
ISPLSI81080V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
834 |
ISPLSI81080V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
835 |
ISPLSI81080V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
836 |
ISPLSI81080V-90LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
837 |
ISPLSI81080V-90LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
838 |
ISPLSI8600V |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
839 |
ISPLSI8600V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
840 |
ISPLSI8600V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
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