| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2SJ109 |
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 812 |
2SJ74 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 813 |
2SK117 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 814 |
2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 815 |
2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 816 |
2SK187 |
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER |
Hitachi Semiconductor |
| 817 |
2SK209 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 818 |
2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 819 |
2SK222 |
N-Channel Junction Silicon FET Low-Frequency, Low Noise Amplifier Applications |
SANYO |
| 820 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 821 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 822 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 823 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 824 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 825 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 826 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 827 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 828 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 829 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 830 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 831 |
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 832 |
2SK389 |
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 833 |
2SK406 |
Low Noise Ku-K BAND GaAs FET (This NE71083 datasheet is also the datasheet of 2SK406, see the Electrical Characteristics table) |
NEC |
| 834 |
2SK407 |
Low noise Ku-K band GaAs MESFET for HI REL applications only (This datasheet of NE67383 is also the datasheet of 2SK407, see the Electrical Characteristics table) |
NEC |
| 835 |
2SK58 |
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise) |
SONY |
| 836 |
2SK609 |
Low Noise Ku-K BAND GaAs FET (This NE71084 datasheet is also the datasheet of 2SK609, see the Electrical Characteristics table) |
NEC |
| 837 |
2SK676H5 |
AlGaAs/GaAs Low Noise Microwave HEMT CHIP |
SONY |
| 838 |
2SK677H5 |
AlGaAs/GaAs Low Noise Microwave HEMT CHIP |
SONY |
| 839 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 840 |
36NQ52 |
Noise diode for noise generator |
Tesla Elektronicke |
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