| No. |
Part Name |
Description |
Manufacturer |
| 811 |
MX29F040TC-70 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 812 |
MX29F040TC-90 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 813 |
MX29F080TC-12 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 814 |
MX29F080TC-70 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 815 |
MX29F080TC-90 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 816 |
MX29LV040TC-55 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 817 |
MX29LV040TC-70 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 818 |
MX29LV040TC-90 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
Macronix International |
| 819 |
PL102-10TC-R |
Clock and Timing - Clock and Data Distribution |
Microchip |
| 820 |
PL611S-02-R80TC-R |
Clock and Timing - Clock Generation |
Microchip |
| 821 |
RM30TC-24 |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 822 |
RM30TC-2H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 823 |
RM30TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 824 |
RM50TC-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 825 |
RM50TC-24 |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 826 |
RM50TC-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 827 |
RM50TC-2H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 828 |
RM50TC-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 829 |
RM50TC-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 830 |
RM50TC-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 831 |
RM50TC-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 832 |
UPA810TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
NEC |
| 833 |
UPA840TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
NEC |
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