No. |
Part Name |
Description |
Manufacturer |
811 |
71M6543F-DB-CT |
Demo Board for the 71M6543F |
MAXIM - Dallas Semiconductor |
812 |
724 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
813 |
730008 |
Evaluation Board for CLC2XX Series (inverting) |
Comlinear Corporation |
814 |
730009 |
Evaluation Board for CLC2XX Series (non-inverting) |
Comlinear Corporation |
815 |
730011 |
Evaluation Board for CLC940 |
Comlinear Corporation |
816 |
730015 |
Evaluation Board for CLC922/925/926 |
Comlinear Corporation |
817 |
730017 |
Evaluation Board for CLC942 |
Comlinear Corporation |
818 |
730019 |
Evaluation Board for CLC560/561 |
Comlinear Corporation |
819 |
730024 |
Evaluation Board for CLC414/CLC415 |
Comlinear Corporation |
820 |
730025 |
Evaluation Board for CLC935/6/7 |
Comlinear Corporation |
821 |
730028 |
Evaluation Board for CLC532 |
Comlinear Corporation |
822 |
730029 |
Evaluation Board for CLC520/522 |
Comlinear Corporation |
823 |
730033 |
Evaluation Board for CLC520/522 |
Comlinear Corporation |
824 |
7343-2USRC |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
825 |
7343-S1060 |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
826 |
78M6613-EVM-1 |
EV Board for the 78M6613 |
MAXIM - Dallas Semiconductor |
827 |
78M6631-EVM-1 |
Evaluation Board for the 78M6631 |
MAXIM - Dallas Semiconductor |
828 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
829 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
830 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
831 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
832 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
833 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
834 |
81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
835 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
836 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
837 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
838 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
839 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
840 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
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