No. |
Part Name |
Description |
Manufacturer |
811 |
K681 |
LOW LEVEL ZENER DIODES SHARP KNEE, LOW IMPEDANCE |
Knox Semiconductor Inc |
812 |
KC1850 |
C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 |
Vishay |
813 |
KP1830 |
C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
814 |
KP1836 |
C-values 100 pF - 0.22 µF, Voltage 630 - 2000 VDC, Very high current and pulse load, Low losses, PCM 15-37.5 |
Vishay |
815 |
KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica |
SANYO |
816 |
KR-1200AAE |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
817 |
KR-1200AUL |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
818 |
KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica |
SANYO |
819 |
KR-1700AUL |
Nominal capacity: 1700mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 17.0mOhm cadnica |
SANYO |
820 |
KSK123 |
N0CHANNEL JUNCTION FET (AF IMPEDANCE CONVERTER) |
Samsung Electronic |
821 |
KSK65 |
N-CHANNEL JUNCTION FET (AM IMPEDANCE CONVERTER) |
Samsung Electronic |
822 |
LCM0207SI |
Fusible Resistor for Constant Voltage Designed for Overload Protection, Specially Spiraled to Provide the Fusible Function, Flame Retardant Coating, Applicable for Battery Chargers, TV Sets, Cordless Phones, PC/CPU Coolers |
Vishay |
823 |
LG1628AXA |
LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier |
Agere Systems |
824 |
LM2757 |
Switched Capacitor Boost Regulator with High Impedance Output in Shutdown |
Texas Instruments |
825 |
LM2757TM/NOPB |
Switched Capacitor Boost Regulator with High Impedance Output in Shutdown 12-DSBGA -30 to 85 |
Texas Instruments |
826 |
LM2757TMX/NOPB |
Switched Capacitor Boost Regulator with High Impedance Output in Shutdown 12-DSBGA -30 to 85 |
Texas Instruments |
827 |
LOG112 |
Precision/ High-Speed Transimpedance Amplifier |
Burr Brown |
828 |
LOG114 |
Precision/ High-Speed Transimpedance Amplifier |
Burr Brown |
829 |
LS4117 |
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET |
Linear Systems |
830 |
LS4117-9 |
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET |
Linear Systems |
831 |
LS4118 |
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET |
Linear Systems |
832 |
LS4119 |
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET |
Linear Systems |
833 |
LS5301 |
High Impedance, Single, N-Channel JFET |
Linear Systems |
834 |
LTC1487 |
Ultra-Low Power RS485 with Low EMI, Shutdown and High Input Impedance |
Linear Technology |
835 |
LTC1487CN8 |
Ultra-Low Power RS485 with Low EMI/ Shutdown and High Input Impedance |
Linear Technology |
836 |
LTC1487CN8#PBF |
Ultra-Low Power RS485 with Low EMI, Shutdown and High Input Impedance |
Linear Technology |
837 |
LTC1487CS8 |
Ultra-Low Power RS485 with Low EMI/ Shutdown and High Input Impedance |
Linear Technology |
838 |
LTC1487CS8#PBF |
Ultra-Low Power RS485 with Low EMI, Shutdown and High Input Impedance |
Linear Technology |
839 |
LTC1487CS8#TR |
Ultra-Low Power RS485 with Low EMI, Shutdown and High Input Impedance |
Linear Technology |
840 |
LTC1487CS8#TRPBF |
Ultra-Low Power RS485 with Low EMI, Shutdown and High Input Impedance |
Linear Technology |
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