| No. |
Part Name |
Description |
Manufacturer |
| 811 |
BSS138W |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 812 |
BSS138W-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 813 |
BSS84 |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 814 |
BSS84-7 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 815 |
BSS8402DW-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 816 |
BSS84V |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 817 |
BSS84V-7 |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 818 |
BSS84W-7-F |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 819 |
BST72A |
N-channel enhancement mode field-effect transistor |
Philips |
| 820 |
BST72A-03 |
N-channel enhancement mode field-effect transistor |
Philips |
| 821 |
BST82 |
N-channel enhancement mode field-effect transistor |
Philips |
| 822 |
BUK638-1000 |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 823 |
BUK638-1000A |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 824 |
BUK638-1000B |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 825 |
BUK638-500B |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 826 |
BUK638-800 |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 827 |
BUK638-800A |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 828 |
BUK638-800B |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 829 |
BUZ205 |
SIPMOS Power Transistor (N channel Enhancement mode FREDFET) |
Siemens |
| 830 |
BUZ215 |
SIPMOS Power Transistor (N channel Enhancement mode FREDFET) |
Siemens |
| 831 |
BUZ380 |
SIPMOS Power Transistor (N channel Enhancement mode FREDFET) |
Siemens |
| 832 |
BUZ384 |
SIPMOS Power Transistor (N channel Enhancement mode FREDFET) |
Siemens |
| 833 |
BUZ385 |
SIPMOS Power Transistor (N channel Enhancement mode FREDFET) |
Siemens |
| 834 |
BXY27 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band and input powers up to 10W |
Mullard |
| 835 |
BXY27 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to S-band |
VALVO |
| 836 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 837 |
BXY28 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to C-band |
VALVO |
| 838 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
| 839 |
BXY29 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to the X-band |
VALVO |
| 840 |
BXY32 |
Silicon planar step recovery diode for high order frequency multipliers with outputs in X band |
Mullard |
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