| No. |
Part Name |
Description |
Manufacturer |
| 811 |
HVP12 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 812 |
HVP14 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 813 |
HVP15 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 814 |
HVP16 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 815 |
HVP5 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 816 |
HVP8 |
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.75 Amperes) |
Rectron Semiconductor |
| 817 |
IMT200-72-10 |
Input voltage 50-72-100 VDC;output voltage 10 VDC;output current:20 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 818 |
IMT200-72-12 |
Input voltage 50-72-100 VDC;output voltage 12 VDC;output current:17 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 819 |
IMT200-72-3.3 |
Input voltage 50-72-100 VDC;output voltage 3.3 VDC;output current:50 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 820 |
IMT200-72-5 |
Input voltage 50-72-100 VDC;output voltage 5 VDC;output current:40 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 821 |
IRF420 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 822 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 823 |
IRF430 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 824 |
IRF432 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 825 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 826 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 827 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 828 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 829 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 830 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 831 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
| 832 |
ISL6525 |
PWM Controller, VOUT 1.20V Min @ �1% Reg, +5V or +12V Supply, 200kHz Free-Running Osc Programmable 50kHz to 1+MHz |
Intersil |
| 833 |
KARN-50-18 |
Termination N-Type 50 DC to 18 GHz |
Mini-Circuits |
| 834 |
KBL005 |
Diode Rectifier Bridge Single 50V 4A 4-Pin Case KBL Bulk |
New Jersey Semiconductor |
| 835 |
KBP005 |
Diode Rectifier Bridge Single 50V 2A 4-Pin(4+Tab) Case KBP |
New Jersey Semiconductor |
| 836 |
KBP005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
Shanghai Sunrise Electronics |
| 837 |
KBP005M |
Diode Rectifier Bridge Single 50V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 838 |
KBPC10 |
Diode Rectifier Bridge Single 50V 15A 4-Pin Case KBPC |
New Jersey Semiconductor |
| 839 |
KBPC10005 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 840 |
KBPC10005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
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