No. |
Part Name |
Description |
Manufacturer |
811 |
INA271-HT |
High Temperature Voltage Output High-Side Measurement Current-Shunt Monitor |
Texas Instruments |
812 |
IR3596 |
Digital Multi-Phase Memory / Mobile Controller |
International Rectifier |
813 |
IR3596MTRPBF |
Digital Multi-Phase Memory / Mobile Controller |
International Rectifier |
814 |
IRHNM53110SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
815 |
IRHNM57110 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
816 |
IRHNM57110SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
817 |
IRHNM57214SE |
250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
818 |
ISD1810-SERIES |
Single-Chip/Single Message Voice Record/Playback Devices 8-to-16 Second Durations |
Winbond Electronics |
819 |
IXTK21N100 |
High Voltage MegaMOSTMFETs |
IXYS Corporation |
820 |
IXTN21N100 |
High Voltage MegaMOSTMFETs |
IXYS Corporation |
821 |
JT6N57 |
LSIs for Serial Port Controller with Built-in Non-Volatile Memory |
TOSHIBA |
822 |
K5A3240YBC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
823 |
K5A3240YBC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
824 |
K5A3240YT |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
825 |
K5A3240YTC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
826 |
K5A3240YTC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
827 |
K5A3340YBC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
828 |
K5A3340YBC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
829 |
K5A3340YT |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
830 |
K5A3340YTC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
831 |
K5A3340YTC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
832 |
K5A3X40YTC |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
833 |
K5C6481NT(B)M |
Multi-Chip Package MEMORY Data Sheet |
Samsung Electronic |
834 |
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM |
Samsung Electronic |
835 |
K5T6432YT |
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM |
Samsung Electronic |
836 |
KAB01D100M |
Multi-Chip Package MEMORY |
Samsung Electronic |
837 |
KAB01D100M-TLGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
838 |
KAB01D100M-TNGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
839 |
KAB02D100M-TLGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
840 |
KAB02D100M-TNGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
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