| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 812 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 813 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
| 814 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 815 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 816 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 817 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 818 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
| 819 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 820 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
| 821 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
| 822 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 823 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 824 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 825 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 826 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
| 827 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 828 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
| 829 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 830 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 831 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
| 832 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 833 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
| 834 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
| 835 |
2N6520RLRM |
High Voltage Transistors |
ON Semiconductor |
| 836 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
| 837 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 838 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 839 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 840 |
2N6762 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
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