| No. |
Part Name |
Description |
Manufacturer |
| 811 |
1N945 |
0TC Reference Voltage Zener |
Microsemi |
| 812 |
1N945 |
0TC Reference Voltage Zener |
Microsemi |
| 813 |
1N945A |
0TC Reference Voltage Zener |
Microsemi |
| 814 |
1N945A |
0TC Reference Voltage Zener |
Microsemi |
| 815 |
1N945B |
0TC Reference Voltage Zener |
Microsemi |
| 816 |
1N945B |
0TC Reference Voltage Zener |
Microsemi |
| 817 |
1N945B-1 |
0TC Reference Voltage Zener |
Microsemi |
| 818 |
1N946 |
0TC Reference Voltage Zener |
Microsemi |
| 819 |
1N946A |
0TC Reference Voltage Zener |
Microsemi |
| 820 |
1N946B |
0TC Reference Voltage Zener |
Microsemi |
| 821 |
1S920 |
General purpose diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 822 |
1S921 |
General purpose diode. Working inverse voltage 100 V. |
Fairchild Semiconductor |
| 823 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
| 824 |
29F1610 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 825 |
29F1610A |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 826 |
29F1610A-10 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 827 |
29F1610A-12 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 828 |
29F1610A-90 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM |
Macronix International |
| 829 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 830 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 831 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 832 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 833 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 834 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 835 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 836 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 837 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 838 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 839 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 840 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
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