No. |
Part Name |
Description |
Manufacturer |
811 |
2N7002V |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
812 |
2N7002V |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
813 |
2N7002V-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
814 |
2N7002VA |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
815 |
2N7002VA |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
816 |
2N7002VA-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
817 |
2N7002W |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
818 |
2N7002W-7-F |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
819 |
2N7002XFB |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
820 |
2SD1784 |
Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
821 |
2SJ103 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
822 |
2SJ104 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
823 |
2SJ105 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
824 |
2SJ106 |
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications |
TOSHIBA |
825 |
2SJ107 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
826 |
2SJ108 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
827 |
2SJ11 |
Field-effect transistor |
TOSHIBA |
828 |
2SJ12 |
Field-effect transistor |
TOSHIBA |
829 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
830 |
2SJ128 |
MOS electric field effect power transistor |
NEC |
831 |
2SJ128-Z |
MOS electric field effect power transistor |
NEC |
832 |
2SJ13 |
Field-effect transistor |
TOSHIBA |
833 |
2SJ132 |
MOS electric field effect power transistor |
NEC |
834 |
2SJ132-Z |
MOS electric field effect power transistor |
NEC |
835 |
2SJ133 |
MOS electric field effect power transistor |
NEC |
836 |
2SJ133-Z |
MOS electric field effect power transistor |
NEC |
837 |
2SJ134 |
MOS FIELD EFFECT TRANSISTOR |
NEC |
838 |
2SJ136 |
MOS Field Effect Power Transistors |
Unknow |
839 |
2SJ137 |
MOS Field Effect Power Transistors |
Unknow |
840 |
2SJ139 |
MOS Field Effect Power Transistors |
Unknow |
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