| No. |
Part Name |
Description |
Manufacturer |
| 811 |
BAR64-02 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 812 |
BAR64-02W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 813 |
BAR64-04 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 814 |
BAR64-04W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 815 |
BAR64-05 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 816 |
BAR64-05W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 817 |
BAR64-06 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 818 |
BAR64-06W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 819 |
BAR64-07 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 820 |
BAR64-W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
| 821 |
BB1 |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
NEC |
| 822 |
BC107 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 823 |
BC107 |
Transistor for audio preamplifiers/drivers |
SGS-ATES |
| 824 |
BC107 |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 825 |
BC107A |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 826 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 827 |
BC107A |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 828 |
BC107B |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 829 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 830 |
BC107B |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 831 |
BC108 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 832 |
BC108 |
Transistor for audio preamplifiers/drivers |
SGS-ATES |
| 833 |
BC108 |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 834 |
BC108A |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 835 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 836 |
BC108A |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 837 |
BC108B |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 838 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 839 |
BC108B |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 840 |
BC108C |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
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