| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2N5237 |
Type 2N5237 Geometry 3111 Polarity NPN |
Semicoa Semiconductor |
| 812 |
2N5238 |
Type 2N5238 Geometry 3111 Polarity NPN |
Semicoa Semiconductor |
| 813 |
2N5339 |
Chip Type 2C5154 Geometry 9201 Polarity NPN |
Semicoa Semiconductor |
| 814 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 815 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 816 |
2N5582 |
Chip Type 2C2222A Geometry 0400 Polarity NPN |
Semicoa Semiconductor |
| 817 |
2N5664 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
| 818 |
2N5666 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
| 819 |
2N5861 |
BIPOLAR DEVICES WITH POLARITY NPN |
New Jersey Semiconductor |
| 820 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 821 |
2N6190 |
Chip Type 2C6193 Geometry 9700 Polarity PNP |
Semicoa Semiconductor |
| 822 |
2N6191 |
Chip Type 2C6193 Geometry 9700 Polarity PNP |
Semicoa Semiconductor |
| 823 |
2N6192 |
Chip Type 2C6193 Geometry 9700 Polarity PNP |
Semicoa Semiconductor |
| 824 |
2N6193 |
Chip Type 2C6193 Geometry 9700 Polarity PNP |
Semicoa Semiconductor |
| 825 |
2N6987 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 826 |
2N6988 |
Type 2N6988 Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 827 |
2N6989 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 828 |
2N6990 |
Chip Type 2C2222A Geometry 0400 Polarity NPN |
Semicoa Semiconductor |
| 829 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 830 |
2N918 |
Chip Type 2C918 Geometry 0013 Polarity NPN |
Semicoa Semiconductor |
| 831 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 832 |
2N918ACSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 833 |
2N918CSM |
GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 834 |
2N918UB |
Chip Type 2C918 Geometry 0013 Polarity NPN |
Semicoa Semiconductor |
| 835 |
2N930 |
Chip Type 2C2484 Geometry 0307 Polarity NPN |
Semicoa Semiconductor |
| 836 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 837 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 838 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 839 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
| 840 |
2SB857 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
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