No. |
Part Name |
Description |
Manufacturer |
811 |
2N6452 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
812 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
813 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
814 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
815 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
816 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
817 |
2N6483 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
818 |
2N6483 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
819 |
2N6484 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
820 |
2N6484 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
821 |
2N6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
822 |
2N6485 |
Trans JFET N-CH 7-Pin TO-71 |
New Jersey Semiconductor |
823 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
824 |
2N6550 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
825 |
2N6659 |
Trans MOSFET N-CH 35V 1.4A 3-Pin TO-205AD |
New Jersey Semiconductor |
826 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
827 |
2N6660 |
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD |
New Jersey Semiconductor |
828 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
829 |
2N6660 |
N-Channel 60-V (D-S) Single and Quad MOSFETs |
Vishay |
830 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
831 |
2N6661 |
Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 |
New Jersey Semiconductor |
832 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
833 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
834 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
835 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
836 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
837 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
838 |
2N6755 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
839 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
840 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
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