| No. |
Part Name |
Description |
Manufacturer |
| 811 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 812 |
BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration |
Infineon |
| 813 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 814 |
BAS21U |
General Purpose Diodes - triple diode array in SC74 parallel configuration |
Infineon |
| 815 |
BAV73 |
Dual high-speed switching diode in common cathode configuration |
Philips |
| 816 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 817 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 818 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 819 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 820 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 821 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 822 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 823 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 824 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 825 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 826 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 827 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 828 |
BDW23 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 829 |
BDW23A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 830 |
BDW23B |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 831 |
BDW23C |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 832 |
BDW24 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 833 |
BDW24A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 834 |
BDW24B |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 835 |
BDW24C |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 836 |
BDW93 |
Silicon epitaxial-base NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 837 |
BDW93A |
Silicon epitaxial-base NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 838 |
BDW93B |
Silicon epitaxial-base NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 839 |
BDW93C |
Silicon epitaxial-base NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 840 |
BDW94 |
Silicon epitaxial-base PNP transistor in monolithic Darlington configuration |
SGS-ATES |
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