| No. |
Part Name |
Description |
Manufacturer |
| 811 |
1GWJ42 |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 812 |
1GWJ43 |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 813 |
1J4B42 |
RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS) |
TOSHIBA |
| 814 |
1JH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 815 |
1JH46 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 816 |
1JU41 |
HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY) |
TOSHIBA |
| 817 |
1JU42 |
HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY) |
TOSHIBA |
| 818 |
1MBI200F-120 |
IGBT module for motor drive inverter, AC and DC servo drive amplifier applications |
COLLMER SEMICONDUCTOR INC |
| 819 |
1MBI200L-120 |
IGBT module for motor drive inverter, AC and DC servo drive amplifier applications |
COLLMER SEMICONDUCTOR INC |
| 820 |
1N3070 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 821 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 822 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 823 |
1N4001 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 824 |
1N4001 |
V(rrm): 50V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 825 |
1N4002 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 826 |
1N4002 |
V(rrm): 100V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 827 |
1N4003 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 828 |
1N4003 |
V(rrm): 200V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 829 |
1N4004 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 830 |
1N4004 |
V(rrm): 400V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 831 |
1N4005 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 832 |
1N4005 |
V(rrm): 600V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 833 |
1N4006 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 834 |
1N4006 |
V(rrm): 800V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 835 |
1N4007 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 836 |
1N4007 |
V(rrm): 1000V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 837 |
1N4009 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 838 |
1N4148 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 839 |
1N4148 |
Silicon whiskerless diode, high speed diode for computer and other applications |
Mullard |
| 840 |
1N4149 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| | | |
