| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 812 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 813 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 814 |
2SC2173 |
UHF Band Power Amplifier Applications |
TOSHIBA |
| 815 |
2SC2178 |
VHF Band Power Amplifier Applications |
TOSHIBA |
| 816 |
2SC2216 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 817 |
2SC2223 |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 818 |
2SC2229 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAGE Switching, Driver Stage Audio Amplifier Applications |
TOSHIBA |
| 819 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 820 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 821 |
2SC2235 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 822 |
2SC2236 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 823 |
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| 824 |
2SC2277 |
LOW FREQUENCY AMPLIFIER Complementary pair with 2SA993 |
Unknow |
| 825 |
2SC2278 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 826 |
2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 827 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 828 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 829 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 830 |
2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 831 |
2SC2420 |
VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 832 |
2SC2458 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications |
TOSHIBA |
| 833 |
2SC2458(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications |
TOSHIBA |
| 834 |
2SC2458(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications |
TOSHIBA |
| 835 |
2SC2458L |
TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 836 |
2SC2459 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications |
TOSHIBA |
| 837 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 838 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 839 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
| 840 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
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