| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 812 |
2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 813 |
2SA2029FHA |
PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 814 |
2SA2029FHAT2L |
PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 815 |
2SA2029M3 |
PNP General Purpose Amplifier Transistor |
ON Semiconductor |
| 816 |
2SA2029T2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 817 |
2SA564 |
Low Level and General Purpose Amplifiers |
Micro Electronics |
| 818 |
2SA608K |
GENERAL PURPOSE AMP, SWITCHING APPLICATIONS |
SANYO |
| 819 |
2SA733 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 820 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 821 |
2SAR522EB |
PNP General Purpose Amplification Transistor |
ROHM |
| 822 |
2SAR522EBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 823 |
2SAR522M |
PNP General Purpose Amplification Transistor |
ROHM |
| 824 |
2SAR522MT2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 825 |
2SAR522UB |
PNP General Purpose Amplification Transistor |
ROHM |
| 826 |
2SAR522UBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 827 |
2SAR523EB |
PNP General Purpose Amplification Transistor |
ROHM |
| 828 |
2SAR523EBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 829 |
2SAR523M |
PNP General Purpose Amplification Transistor |
ROHM |
| 830 |
2SAR523MT2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 831 |
2SAR523UB |
PNP General Purpose Amplification Transistor |
ROHM |
| 832 |
2SAR523UBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 833 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 834 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
| 835 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 836 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 837 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
| 838 |
2SC2412KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 839 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 840 |
2SC2712GT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| | | |
