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Datasheets for S36

Datasheets found :: 1143
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No. Part Name Description Manufacturer
811 MPS3693 Low Noise NPN Transistor FERRANTI
812 MPS3693 General purpose NPN transistor FERRANTI
813 MPS3693 NPN Silicon General Purpose RF Amplifier Transistor ITT Semiconductors
814 MPS3693 NPN silicon annular transistor designed for general purpose RF amplifier, well suited for use in AM/FM receivers Motorola
815 MPS3693 NPN Small Signal Transistor National Semiconductor
816 MPS3693C NPN TRANSISTOR etc
817 MPS3694 NPN silicon annular transistor designed for general purpose RF amplifier, well suited for use in AM/FM receivers Motorola
818 MPS3694 NPN Small Signal Transistor National Semiconductor
819 MT3S36FS TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION TOSHIBA
820 MT3S36T TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION TOSHIBA
821 MURS360 ULTRAFAST RECTIFIERS 3.0 AMPERES 200-600 VOLTS Motorola
822 MURS360 3A 600V Ultrafast Rectifier ON Semiconductor
823 MURS360 Recovery Rectifier Rectron Semiconductor
824 MURS360 Ultrafast Rectifiers, Forward Current 3.0A, Reverse Recovery Time 50ns Vishay
825 MURS360BT3 Surface Mount Ultrafast Power Rectifiers ON Semiconductor
826 MURS360T3 Ultra Fast Rectifier (less than 100ns) Microsemi
827 MURS360T3 ULTRAFAST RECTIFIERS 3.0 AMPERES 200-600 VOLTS Motorola
828 MURS360T3 3A 600V Ultrafast Rectifier ON Semiconductor
829 MURS360T3G Surface Mount Ultrafast Power Rectifiers ON Semiconductor
830 NCS36000 Passive Infrared Detector Controller (PIR) ON Semiconductor
831 NLAS3699 Dual DPDT Ultra-Low RON Switch ON Semiconductor
832 NLAS3699B Analog Switch, Dual DPDT, Ultra−Low RON ON Semiconductor
833 NLAS3699MN1R2G Dual DPDT Ultra-Low RON Switch ON Semiconductor
834 NX8563LAS366-CC Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1536.60 nm. Frequency 195.10 THz. SC-UPC. NEC
835 NX8563LAS366-CD Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1536.60 nm. Frequency 195.10 THz. SC-APC. NEC
836 NX8567SAS362-BC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1536.216 nm. Frequency 195.15 THz. FC-UPC connector. NEC
837 NX8567SAS362-CC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1536.216 nm. Frequency 195.15 THz. SC-UPC connector. NEC
838 NX8567SAS366-BC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1536.643 nm. Frequency 195.10 THz. FC-UPC connector. NEC
839 NX8567SAS366-CC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1536.643 nm. Frequency 195.10 THz. SC-UPC connector. NEC
840 PDS360 Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers Diodes


Datasheets found :: 1143
Page: | 24 | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 |



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