| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2SC752TM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 812 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 813 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 814 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 815 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 816 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 817 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
| 818 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 819 |
2SD1026 |
Low-speed switching Darlington transistor |
Shindengen |
| 820 |
2SD1027 |
Low-speed switching Darlington transistor |
Shindengen |
| 821 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
| 822 |
2SD1118 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
Fuji Electric |
| 823 |
2SD1157 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHOING |
Fuji Electric |
| 824 |
2SD1176 |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
| 825 |
2SD1176A |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
| 826 |
2SD1212 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 827 |
2SD1213 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 828 |
2SD1235 |
NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 829 |
2SD1308 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING INDUSTRIAL USE |
Unknow |
| 830 |
2SD1564 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 831 |
2SD1589 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 832 |
2SD1590 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 833 |
2SD1595 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 834 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 835 |
2SD1682 |
NPN Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching Applications |
SANYO |
| 836 |
2SD1775 |
Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio) |
Panasonic |
| 837 |
2SD1843 |
Low-freq. power amp., low-speed switching power tr. |
NEC |
| 838 |
2SD1843-T |
Low-freq. power amp., low-speed switching power tr. |
NEC |
| 839 |
2SD193 |
Low-Speed Switching Transistor |
TOSHIBA |
| 840 |
2SD2196 |
Low-speed switching Darlington transistor |
Shindengen |
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