No. |
Part Name |
Description |
Manufacturer |
811 |
BAR64-02 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
812 |
BAR64-02W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
813 |
BAR64-04 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
814 |
BAR64-04W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
815 |
BAR64-05 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
816 |
BAR64-05W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
817 |
BAR64-06 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
818 |
BAR64-06W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
819 |
BAR64-07 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
820 |
BAR64-W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
821 |
BB1 |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
NEC |
822 |
BC107 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
823 |
BC107 |
Transistor for audio preamplifiers/drivers |
SGS-ATES |
824 |
BC107 |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
825 |
BC107A |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
826 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
827 |
BC107A |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
828 |
BC107B |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
829 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
830 |
BC107B |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
831 |
BC108 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
832 |
BC108 |
Transistor for audio preamplifiers/drivers |
SGS-ATES |
833 |
BC108 |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
834 |
BC108A |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
835 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
836 |
BC108A |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
837 |
BC108B |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
838 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
839 |
BC108B |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
840 |
BC108C |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
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