No. |
Part Name |
Description |
Manufacturer |
811 |
HFA60MB60C |
600V 60A HEXFRED Common Cathode Diode in a D-60 package |
International Rectifier |
812 |
HFA60MC60C |
600V 60A HEXFRED Common Cathode Diode in a TO-249AA Isolated package |
International Rectifier |
813 |
HFB60HF20 |
200V 60A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package |
International Rectifier |
814 |
HFB60HF20C |
200V 60A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package |
International Rectifier |
815 |
HFB60HF20SCS |
200V 60A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package |
International Rectifier |
816 |
HFB60HNX20 |
200V 60A Hi-Rel Ultra-Fast Discrete Diode in a SupIR-SMD package |
International Rectifier |
817 |
HFB60HNX20SCS |
200V 60A Hi-Rel Ultra-Fast Discrete Diode in a SupIR-SMD package |
International Rectifier |
818 |
HMBZ5249B |
19V 6.6A zener diode |
Hi-Sincerity Microelectronics |
819 |
HMBZ5250B |
20V 6.2A zener diode |
Hi-Sincerity Microelectronics |
820 |
HMM5249B |
19V 6.6A zener diode |
Hi-Sincerity Microelectronics |
821 |
HMM5250B |
20V 6.2A zener diode |
Hi-Sincerity Microelectronics |
822 |
HYB3116400BJ-60 |
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM |
Infineon |
823 |
HYB3116405BJ-60 |
4M x 4 Bit 4k 3.3 V 60 ns EDO DRAM |
Infineon |
824 |
HYB3117400BJ-60 |
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM |
Infineon |
825 |
HYB3117405BJ-60 |
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM |
Infineon |
826 |
HYB3117800BSJ-60 |
2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM |
Infineon |
827 |
HYB3117805BSJ-60 |
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM |
Infineon |
828 |
HYB3118160BSJ-60 |
1M x 16 Bit 1k 3.3 V 60 ns FPM DRAM |
Infineon |
829 |
HYB3118165BSJ-60 |
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM |
Infineon |
830 |
HYB3118165BST-60 |
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM |
Infineon |
831 |
HYB314100BJ-60 |
4M x 1 Bit FPM DRAM 3.3 V 60 ns |
Infineon |
832 |
HYB314171BJ-60 |
256k x 16 Bit FPM DRAM 3.3 V 60 ns |
Infineon |
833 |
HYB314175BJ-60 |
256k x 16 Bit EDO DRAM 3.3 V 60 ns |
Infineon |
834 |
HYB314400BJ-60 |
1M x 4 Bit FPM DRAM 3.3 V 60 ns |
Infineon |
835 |
HYB314405BJ-60 |
1M x 4 Bit EDO DRAM 3.3 V 60 ns |
Infineon |
836 |
HYB5116400BJ-60 |
4M x 4 Bit 4k 5 V 60 ns FPM DRAM |
Infineon |
837 |
HYB5116405BJ-60 |
4M x 4 Bit 4k 5 V 60 ns EDO DRAM |
Infineon |
838 |
HYB5117400BJ-60 |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM |
Infineon |
839 |
HYB5117405BJ-60 |
4M x 4 Bit 2k 5 V 60 ns EDO DRAM |
Infineon |
840 |
HYB5117800BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM |
Infineon |
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