No. |
Part Name |
Description |
Manufacturer |
8131 |
Q62702-F1504 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
8132 |
Q62702-F1510 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
8133 |
Q62702-F1531 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
8134 |
Q62702-F1549 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
8135 |
Q62702-F1549 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
8136 |
Q62702-F1559 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
8137 |
Q62702-F1559 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
8138 |
Q62702-F1576 |
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
8139 |
Q62702-F1577 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
8140 |
Q62702-F1591 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
8141 |
Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) |
Siemens |
8142 |
Q62702-F1601 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
8143 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
8144 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
8145 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
8146 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
8147 |
Q62702-F1685 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
8148 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
8149 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
8150 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
8151 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
8152 |
Q62702-F1794 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
8153 |
Q62702-F456 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
8154 |
Q62702-F457 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
8155 |
QPA2609 |
7 - 14 GHz GaAs Low Noise Amplifier |
Qorvo |
8156 |
QPA2609D |
7-14 GHz Low Noise Amplifier |
Qorvo |
8157 |
QPA2626 |
17 - 22 GHz GaAs Low Noise Amplifier |
Qorvo |
8158 |
QPA2626D |
17 - 23 GHz Low Noise Amplifier Die |
Qorvo |
8159 |
QPA2628 |
22 - 32 GHz GaAs Low Noise Amplifier |
Qorvo |
8160 |
QPA2628D |
25 - 31 GHz GaAs Low Noise Amplifier |
Qorvo |
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