| No. |
Part Name |
Description |
Manufacturer |
| 8131 |
Q62702-F1559 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 8132 |
Q62702-F1576 |
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 8133 |
Q62702-F1577 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 8134 |
Q62702-F1591 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 8135 |
Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) |
Siemens |
| 8136 |
Q62702-F1601 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 8137 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 8138 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 8139 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 8140 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 8141 |
Q62702-F1685 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 8142 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8143 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8144 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8145 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 8146 |
Q62702-F1794 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 8147 |
Q62702-F456 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 8148 |
Q62702-F457 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 8149 |
QPA2609 |
7 - 14 GHz GaAs Low Noise Amplifier |
Qorvo |
| 8150 |
QPA2609D |
7-14 GHz Low Noise Amplifier |
Qorvo |
| 8151 |
QPA2626 |
17 - 22 GHz GaAs Low Noise Amplifier |
Qorvo |
| 8152 |
QPA2626D |
17 - 23 GHz Low Noise Amplifier Die |
Qorvo |
| 8153 |
QPA2628 |
22 - 32 GHz GaAs Low Noise Amplifier |
Qorvo |
| 8154 |
QPA2628D |
25 - 31 GHz GaAs Low Noise Amplifier |
Qorvo |
| 8155 |
QPA2735 |
13.75 - 18 GHz GaAs Low Noise Amplifier |
Qorvo |
| 8156 |
QPA2735D |
13 - 20 GHz GaAs Low Noise Amplifier |
Qorvo |
| 8157 |
QPD2210 |
10 - 13 GHz GaAs Low Noise Amplifier |
Qorvo |
| 8158 |
QPL1000 |
8 - 11 GHz GaN Low Noise Amplifier |
Qorvo |
| 8159 |
QPL1002 |
0.03 - 3 GHz GaN Low Noise Amplifier |
Qorvo |
| 8160 |
QPL2210 |
10 - 13 GHz GaAs Low Noise Amplifier |
Qorvo |
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