| No. |
Part Name |
Description |
Manufacturer |
| 8131 |
MBRF10U200CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8132 |
MBRF10U45CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8133 |
MBRF10U60CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8134 |
MBRF15U45CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8135 |
MBRF20U100CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8136 |
MBRF20U150CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8137 |
MBRF20U200CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8138 |
MBRF20U45CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8139 |
MBRF20U60CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8140 |
MBRF30U100CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8141 |
MBRF30U45CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8142 |
MBRF30U60CTA |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8143 |
MBRP30U200CT |
SCHOTTKY BARRIER TYPE DIODE |
Korea Electronics (KEC) |
| 8144 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8145 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8146 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8147 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8148 |
MC2835 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 8149 |
MC2836 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8150 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 8151 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8152 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 8153 |
MC2840 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 8154 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 8155 |
MC2842 |
MC2842 |
Isahaya Electronics Corporation |
| 8156 |
MC2843 |
MC2843 |
Isahaya Electronics Corporation |
| 8157 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8158 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 8159 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 8160 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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