| No. |
Part Name |
Description |
Manufacturer |
| 8131 |
UF281OOV |
RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz |
Tyco Electronics |
| 8132 |
UF281OP |
RF MOSFET Power Transistor, IOW, 28V 100 - 500 MHz |
Tyco Electronics |
| 8133 |
UF2820P |
RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz |
Tyco Electronics |
| 8134 |
UF2820R |
RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz |
Tyco Electronics |
| 8135 |
UF2840G |
RF MOSFET Power Transistor, 4OW, 28V 100 - 500 MHz |
Tyco Electronics |
| 8136 |
UF2840P |
RF MOSFET Power Transistor, 40W, 28V 100-500 MHz |
MA-Com |
| 8137 |
UF284OP |
RF MOSFET Power Transistor, 4OW, 28V 100 - 500 MHz |
Tyco Electronics |
| 8138 |
UNA0801 |
Silicon PNP epitaxial planer transistor, Silicon NPN epitaxial planer transistor |
Panasonic |
| 8139 |
USA-2N1411 |
MAT® PNP switch - germanium transistor, military version |
Sprague |
| 8140 |
USA-2N2219 |
SEPT® NPN planar epitaxial high-speed transistor, military version |
Sprague |
| 8141 |
USA-2N2221 |
SEPT® NPN planar epitaxial high-speed transistor, military version |
Sprague |
| 8142 |
USA-2N2222 |
SEPT® NPN planar epitaxial high-speed transistor, military version |
Sprague |
| 8143 |
USA-2N393 |
MAT® PNP switch - germanium transistor, military version |
Sprague |
| 8144 |
USA-2N499 |
MADT® PNP communications types - germanium transistor, military version |
Sprague |
| 8145 |
USA-2N499A |
MADT® PNP communications types - germanium transistor, military version |
Sprague |
| 8146 |
USA-2N502A |
MADT® PNP communications types - germanium transistor, military version |
Sprague |
| 8147 |
USA-2N502B |
MADT® PNP communications types - germanium transistor, military version |
Sprague |
| 8148 |
V125 |
NPN silicon triple diffused transistor, high speed, high current switching |
NEC |
| 8149 |
V126 |
PNP silicon triple diffused transistor, high speed, high current switching |
NEC |
| 8150 |
V23818-N15-L16 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, with collar, DC-DC Coupling ext. Temp |
Infineon |
| 8151 |
V23818-N15-L17 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, with collar, DC-DC Coupling |
Infineon |
| 8152 |
V23818-N15-L356 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, with collar, AC-AC Coupling ext. Temp |
Infineon |
| 8153 |
V23818-N15-L457 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, collar, active data output if SD low |
Infineon |
| 8154 |
V23836-C18-C363 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 155 Mbit/s, 21 km, 1x9, SC Duplex Connector, 3,3 V, DC/DC coupling |
Infineon |
| 8155 |
V23836-C18-C63 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 155 Mbit/s, 21 km, 1x9, SC Duplex Connector, 5 V, DC/DC coupling |
Infineon |
| 8156 |
V443 |
NPN silicon triple diffused darlington transistor, high current, high current switching |
NEC |
| 8157 |
V4585D |
CMOS circuit, 4 bit size comparator, possibly equivalent CD4585BE |
RFT |
| 8158 |
V62/13612-01XE |
2-A, Fast-Transient, Low-Dropout Voltage Regulator, TPS7A7200-EP 20-VQFN -40 to 125 |
Texas Instruments |
| 8159 |
VN0610L |
MOSPOWER N-Channel Enhancement Mode Transistor, Zener Diode Protected Gate |
Siliconix |
| 8160 |
VN10KE |
MOSPOWER N-Channel Enhancement Mode Transistor, Zener Diode Protected Gate |
Siliconix |
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