| No. |
Part Name |
Description |
Manufacturer |
| 8161 |
UGS5J |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 8162 |
UMH11N |
Discrete Devices-Transistor-Complex Digital Transistor |
Taiwan Semiconductor |
| 8163 |
UNIWATT |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 8164 |
UR2KB100 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8165 |
UR2KB60 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8166 |
UR2KB80 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8167 |
UR3KB100 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8168 |
UR3KB60 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8169 |
UR3KB80 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8170 |
UR4KB100 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8171 |
UR4KB60 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8172 |
UR4KB80 |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 8173 |
US1A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8174 |
US1B |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8175 |
US1D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8176 |
US1G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8177 |
US1J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8178 |
US1K |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8179 |
US1M |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8180 |
UT8Q512-20IWA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
| 8181 |
UT8Q512-IWA |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
| 8182 |
UT9Q512-20IWA |
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 8183 |
UT9Q512-IWA |
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 8184 |
W005 |
Bridge: Standard |
Taiwan Semiconductor |
| 8185 |
W005G |
Bridge: Standard |
Taiwan Semiconductor |
| 8186 |
W005GM |
Bridge: Standard |
Taiwan Semiconductor |
| 8187 |
W005M |
Bridge: Standard |
Taiwan Semiconductor |
| 8188 |
W01 |
Bridge: Standard |
Taiwan Semiconductor |
| 8189 |
W01G |
Bridge: Standard |
Taiwan Semiconductor |
| 8190 |
W01GM |
Bridge: Standard |
Taiwan Semiconductor |
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