| No. |
Part Name |
Description |
Manufacturer |
| 8161 |
BAY93 |
Silicon switching diode |
IPRS Baneasa |
| 8162 |
BAY93 |
Glass-Case Fast Switching Diode |
IPRS Baneasa |
| 8163 |
BB1 |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
NEC |
| 8164 |
BB804 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
| 8165 |
BB814 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
| 8166 |
BB824 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
| 8167 |
BC140 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8168 |
BC140 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8169 |
BC140-10 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8170 |
BC140-16 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8171 |
BC140-6 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8172 |
BC140/BC160 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8173 |
BC141 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8174 |
BC141 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8175 |
BC141-10 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8176 |
BC141-16 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8177 |
BC141-6 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8178 |
BC141/BC161 paired |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 8179 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 8180 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 8181 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 8182 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 8183 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 8184 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 8185 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 8186 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 8187 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 8188 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 8189 |
BC309 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 8190 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
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