| No. |
Part Name |
Description |
Manufacturer |
| 8191 |
STY139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
| 8192 |
STY140NS10 |
N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET |
SGS Thomson Microelectronics |
| 8193 |
STY140NS10 |
N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET |
ST Microelectronics |
| 8194 |
STY145N65M5 |
N-channel 650 V, 0.012 Ohm typ., 138 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
| 8195 |
STY15NA100 |
N - CHANNEL 1000V - 0.65 W - 15A - Max247, MOSFET |
SGS Thomson Microelectronics |
| 8196 |
STY15NA100 |
N-CHANNEL 1000V - 0.65 OHM - 15A - MAX247 |
ST Microelectronics |
| 8197 |
STY16NA90 |
N - CHANNEL 900V - 0.5 Ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET |
SGS Thomson Microelectronics |
| 8198 |
STY25NA60 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET |
SGS Thomson Microelectronics |
| 8199 |
STY30NK90Z |
N-CHANNEL 900V - 0.25 OHM - 26A MAX247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET |
ST Microelectronics |
| 8200 |
STY34NB50 |
N - CHANNEL 500V - 0.11Ohm - 34 A - Max247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 8201 |
STY34NB50 |
N- CHANNEL 500 V - 0.11 OHM - 34 A - MAX247 POWERMESH MOSFET |
ST Microelectronics |
| 8202 |
STY34NB50F |
N - CHANNEL 500V - 0.11Ohm - 34 A - Max247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 8203 |
STY34NB50F |
N-CHANNEL 500V - 0.11 OHM - 34A - MAX247 POWERMESH MOSFET |
ST Microelectronics |
| 8204 |
STY34NK80Z |
N-CHANNEL 800V - 0.20 OHM - 28A MAX247 ZENER-PROTECTED SUPERMESH™POWER MOSFET |
ST Microelectronics |
| 8205 |
STY60NA20 |
N - CHANNEL 200V - 0.030W - 60 A - Max247 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 8206 |
STY60NK30Z |
N-CHANNEL 300V 0.033 OHM 60A MAX247 ZENER-PROTECTED SUPERMESH POWER MOSFET |
ST Microelectronics |
| 8207 |
STY60NM50 |
N-CHANNEL 500V 0.045 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 8208 |
STY60NM50 |
N-CHANNEL 500V - 0.045 OHM - 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
| 8209 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 8210 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
| 8211 |
STY80NM60N |
N-channel 600 V, 0.030 Ohm, 74 A, MDmesh(TM) II Power MOSFET Max247 |
ST Microelectronics |
| 8212 |
SUPEVKIT |
Evaluation Kit for the MAX63XX Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 8213 |
T2300A |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 8214 |
T2300B |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 8215 |
T2300D |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. |
General Electric Solid State |
| 8216 |
T2300F |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. |
General Electric Solid State |
| 8217 |
T2300M |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 600 V. |
General Electric Solid State |
| 8218 |
T2300N |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. |
General Electric Solid State |
| 8219 |
T2301A |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 8220 |
T2301B |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V. |
General Electric Solid State |
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