No. |
Part Name |
Description |
Manufacturer |
8191 |
1N5229B_T50A |
4.3V, 0.5W Zener Diode |
Fairchild Semiconductor |
8192 |
1N5229B_T50R |
4.3V, 0.5W Zener Diode |
Fairchild Semiconductor |
8193 |
1N5229C |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
8194 |
1N5229C |
Diode Zener Single 4.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8195 |
1N5229D |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
8196 |
1N5229D |
Diode Zener Single 4.3V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8197 |
1N5229UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. |
Microsemi |
8198 |
1N5229UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. |
Microsemi |
8199 |
1N5230 |
0.5W SILICON PLANAR ZENER DIODES |
Chenyi Electronics |
8200 |
1N5230 |
500 mW silicon zener diode. Nominal zener voltage 4.7 V. |
Fairchild Semiconductor |
8201 |
1N5230 |
500 mW silicon zener diode. Nominal zener voltage 4.7 V. |
Fairchild Semiconductor |
8202 |
1N5230 |
SILICON PLANAR ZENER DIODES |
GOOD-ARK Electronics |
8203 |
1N5230 |
Silicon Planar Zener Diodes |
Honey Technology |
8204 |
1N5230 |
500mW, 4.7 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
8205 |
1N5230 |
Pd=500mW, Vz=4.7V zener diode |
MCC |
8206 |
1N5230 |
500 mW Zener Diode 2.4 to 200 Volts |
Micro Commercial Components |
8207 |
1N5230 |
SILICON 500 mW ZENER DIODES |
Microsemi |
8208 |
1N5230 |
500mW surmetic silicon Zener Diode |
Motorola |
8209 |
1N5230 |
Diode Zener Single 4.7V 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8210 |
1N5230 |
SILICON PLANAR ZENER DIODES |
Semtech |
8211 |
1N5230 |
0.5W SILICON PLANAR ZENER DIODES |
Shanghai Sunrise Electronics |
8212 |
1N5230 |
SILICON PLANAR ZENER DIODES |
Surge Components |
8213 |
1N5230A |
4.7 V, 20 mA, zener diode |
Leshan Radio Company |
8214 |
1N5230A |
Diode Zener Single 4.7V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8215 |
1N5230AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.7 V. Tolerance +-10%. |
Microsemi |
8216 |
1N5230AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.7 V. Tolerance +-10%. |
Microsemi |
8217 |
1N5230B |
500mw Epitaxial Zener Diode |
Comchip Technology |
8218 |
1N5230B |
4.7V 500 mW Zener Diode |
Continental Device India Limited |
8219 |
1N5230B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
8220 |
1N5230B |
1N52 SERIES ZENER DIODES |
Leshan Radio Company |
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