| No. |
Part Name |
Description |
Manufacturer |
| 8221 |
APPLICATION NOTE 1024 |
RF linear hybrid amplifiers |
Motorola |
| 8222 |
APPLICATION NOTE 1025 |
Realiability considerations in design and use of RF integrated circuits |
Motorola |
| 8223 |
APPLICATION NOTE 1027 |
Reliability/performance aspects of CATV amplifier design |
Motorola |
| 8224 |
APPLICATION NOTE 1029 |
TV transponsers band IV and V P0=0.5W/1.0W |
Motorola |
| 8225 |
APPLICATION NOTE 1034 |
Three balun designs for push-pull amplifiers |
Motorola |
| 8226 |
APPLICATION NOTE 1037 |
Solid State Power Amplifier 300W FM 88-108MHz |
Motorola |
| 8227 |
APPLICATION NOTE 215A |
RF small signal design using two-port parameters |
Motorola |
| 8228 |
APPLICATION NOTE 282A |
Systemizing RF power amplifier design |
Motorola |
| 8229 |
APPLICATION NOTE 419 |
UHF amplifier design using data sheet design curves |
Motorola |
| 8230 |
APPLICATION NOTE 548A |
Microstrip design techniques for UHF amplifiers |
Motorola |
| 8231 |
APPLICATION NOTE 551 |
Tuning diode design techniques |
Motorola |
| 8232 |
APPLICATION NOTE 555 |
Mounting stripline-opposed-emitter (SOE) transistors |
Motorola |
| 8233 |
APPLICATION NOTE 790 |
Thermal rating of RF power transistors |
Motorola |
| 8234 |
APPLICATION NOTE 860 |
Power MOSFETs versus Bipolar Transistors |
Motorola |
| 8235 |
APPLICATION NOTE 878 |
VHF MOS power applications |
Motorola |
| 8236 |
APPLICATION NOTE 938 |
Mounting techniques for POWERMACRO transistor |
Motorola |
| 8237 |
APPLICATION NOTE AR165S |
RF power MOSFETs |
Motorola |
| 8238 |
APPLICATION NOTE AR313 |
Wideband RF Power Amplifier |
Motorola |
| 8239 |
APPLICATION NOTES |
Application Notes from TRW Data Book 1991 |
TRW |
| 8240 |
APPLICATION NOTES |
Application Notes from TRW Data Book 1991 |
TRW |
| 8241 |
APPLICATION-NOTE |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 8242 |
APPLICATION-NOTE |
High Frequency small signal circuit design application note |
NEC |
| 8243 |
APPLICATION-NOTE |
4V Gate-Driven Power MOS FET With Low drain to source ON-STATE Resistance Application Note |
NEC |
| 8244 |
AR-141 |
Application Note - Applying Power MOSFETs in Class D/E RF Power Amplifier Design |
Motorola |
| 8245 |
AR-165S |
Application Note - RF power MOSFETs |
Motorola |
| 8246 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 8247 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 8248 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 8249 |
ASI10707 |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode |
Advanced Semiconductor |
| 8250 |
ASIMRF260 |
SILICON NPN RF POWER TRANSISTOR |
Advanced Semiconductor |
| | | |
