No. |
Part Name |
Description |
Manufacturer |
8251 |
AF279S |
PNP Germanium UHF Transistor in Special T Case, for prestages up to 900MHz |
Siemens |
8252 |
AF280 |
Transistor PNP |
Siemens |
8253 |
AF280 |
PNP Germanium UHF Transistor in Special T Case, up to 900MHz |
Siemens |
8254 |
AF306 |
Transistor PNP |
Siemens |
8255 |
AF306 |
PNP Germanium Planar RF Transistor for prestages, mixer and oscillator stages up to 260MHz |
Siemens |
8256 |
AF379 |
Transistor PNP |
Siemens |
8257 |
AF379 |
PNP Germanium RF Transistor for RF tuner stages up to 900MHz |
Siemens |
8258 |
AFY12 |
Transistor PNP |
Siemens |
8259 |
AFY15 |
Germanium PNP transistor for RF and IF stages up to 10MHz |
AEG-TELEFUNKEN |
8260 |
AFY16 |
Transistor PNP |
Siemens |
8261 |
AFY16 |
Germanium PNP transistor for pre-, mixer and oscillator stages up to 860 MHz |
VALVO |
8262 |
AFY18 |
Transistor PNP |
Siemens |
8263 |
AFY34 |
Germanium high-frequency MESA PNP transistor with coaxial package |
Siemens |
8264 |
AFY37 |
Transistor PNP |
Siemens |
8265 |
AFY39 |
Transistor PNP |
Siemens |
8266 |
AFY42 |
Transistor PNP |
Siemens |
8267 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
8268 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
8269 |
AM1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
8270 |
AM1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
8271 |
AM1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
8272 |
AM1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
8273 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
8274 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
8275 |
AM1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
8276 |
AM1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
8277 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
8278 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
8279 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
8280 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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