| No. |
Part Name |
Description |
Manufacturer |
| 8311 |
RM400HA-24S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 8312 |
RM400HA-24S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8313 |
RM400HA-24S |
Super Fast Recovery Single Diode Module (400 Amperes/1200 Volts) |
Powerex Power Semiconductors |
| 8314 |
RM400HA-34S |
Super Fast Recovery Single Diode Module (400 Amperes/1700 Volts) |
Powerex Power Semiconductors |
| 8315 |
RM400HV-34S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 8316 |
RM400HV-34S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8317 |
RM50C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8318 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8319 |
RM50CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8320 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8321 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8322 |
RM50DA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8323 |
RM50DA-C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 8324 |
RM50DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 8325 |
RM50DA/CA/C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 8326 |
RM50HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8327 |
RM50HG-12S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 8328 |
RM50HG-12S |
MITSUBISHI FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8329 |
RM50HG-12S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 8330 |
RM50HG-12S |
Super Fast Recovery Single Diode (50 Amperes/600 Volts) |
Powerex Power Semiconductors |
| 8331 |
RM60SZ-6S/-6R |
Fast Recovery Diode Modules, F Series (for welding) |
Mitsubishi Electric Corporation |
| 8332 |
RMB2S |
MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER |
General Semiconductor |
| 8333 |
RMB2S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
| 8334 |
RMB2S |
Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier, Forward Current 0.5 A, Reverse Recovery time 150 ns, Reverse Voltage 200 to 400 V |
Vishay |
| 8335 |
RMB4S |
MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER |
General Semiconductor |
| 8336 |
RMB4S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
| 8337 |
RMB4S |
Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier, Forward Current 0.5 A, Reverse Recovery time 150 ns, Reverse Voltage 200 to 400 V |
Vishay |
| 8338 |
RMB6S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
| 8339 |
RN 2Z |
Ultrafast recovery diodes |
Sanken |
| 8340 |
RN 4A |
Ultrafast recovery diodes |
Sanken |
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