| No. |
Part Name |
Description |
Manufacturer |
| 8311 |
2SC1921 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 8312 |
2SC1921 |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 8313 |
2SC1922 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 8314 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 8315 |
2SC1924 |
NPN silicon high speed switching transistor (This datasheet of NE32740A series is also the datasheet of 2SC1924, see the Electrical Characteristics table) |
NEC |
| 8316 |
2SC1925 |
NPN silicon high speed switching transistor (This datasheet NE32740B series is also the datasheet of 2SC1925, see the Electrical Characteristics table) |
NEC |
| 8317 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 8318 |
2SC1929 |
SI NPN EPITAXIAL PLANAR |
Panasonic |
| 8319 |
2SC1929 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 8320 |
2SC1940 |
NPN SILICON TRANSISTOR |
NEC |
| 8321 |
2SC1940 |
Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 |
New Jersey Semiconductor |
| 8322 |
2SC1941 |
NPN SILICON TRANSISTOR |
NEC |
| 8323 |
2SC1942 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 8324 |
2SC1944 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8325 |
2SC1945 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8326 |
2SC1946 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8327 |
2SC1947 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8328 |
2SC1947 |
Trans GP BJT NPN 17V 1A 3-Pin T-8E |
New Jersey Semiconductor |
| 8329 |
2SC1953 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 8330 |
2SC1955 |
Silicon NPN epitaxial planar VHF band power transistor |
TOSHIBA |
| 8331 |
2SC1957 |
NPN Silicon Power Transistor |
NEC |
| 8332 |
2SC1965 |
NPN epitaxial planar RF power VHF transistor 6W 13.5V |
Mitsubishi Electric Corporation |
| 8333 |
2SC1966 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8334 |
2SC1967 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8335 |
2SC1968 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8336 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8337 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8338 |
2SC1970 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8339 |
2SC1971 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8340 |
2SC1971 |
Trans GP BJT NPN 17V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| | | |
