No. |
Part Name |
Description |
Manufacturer |
8341 |
MC56U016NACA |
MultiMediaCard Specification |
Samsung Electronic |
8342 |
MC56U032HACA |
MultiMediaCard Specification |
Samsung Electronic |
8343 |
MC56U032NACA |
MultiMediaCard Specification |
Samsung Electronic |
8344 |
MC56U032NCFA |
MultiMediaCard Specification |
Samsung Electronic |
8345 |
MC56U064HACA |
MultiMediaCard Specification |
Samsung Electronic |
8346 |
MC56U064NACA |
MultiMediaCard Specification |
Samsung Electronic |
8347 |
MC56U128HACA |
MultiMediaCard Specification |
Samsung Electronic |
8348 |
MC56U128NACA |
MultiMediaCard Specification |
Samsung Electronic |
8349 |
MC56U256HACA |
MultiMediaCard Specification |
Samsung Electronic |
8350 |
MC56U256NACA |
MultiMediaCard Specification |
Samsung Electronic |
8351 |
MC56U512HACA |
MultiMediaCard Specification |
Samsung Electronic |
8352 |
MC56U512NACA |
MultiMediaCard Specification |
Samsung Electronic |
8353 |
MJD127 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
8354 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
8355 |
MJE170 |
-60 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8356 |
MJE171 |
-80 V, -1 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8357 |
MJE172 |
-100 V, -1 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8358 |
MJE180 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8359 |
MJE181 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8360 |
MJE182 |
60 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8361 |
MJE200 |
40 V, 5 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8362 |
MJE210 |
-40 V, -5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8363 |
MJE2955T |
-70 V, -10 A, PNP silicon transistor |
Samsung Electronic |
8364 |
MJE3055T |
70 V, 10 A, NPN silicon transistor |
Samsung Electronic |
8365 |
MJE340 |
300 V, 500 A, NPN epitaxial silicon transistor |
Samsung Electronic |
8366 |
MJE350 |
-300 V, -500 A, PNP epitaxial silicon transistor |
Samsung Electronic |
8367 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
8368 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
8369 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
8370 |
MJE703 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
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