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Datasheets for AMSUNG

Datasheets found :: 9668
Page: | 275 | 276 | 277 | 278 | 279 | 280 | 281 | 282 | 283 |
No. Part Name Description Manufacturer
8341 MC56U016NACA MultiMediaCard Specification Samsung Electronic
8342 MC56U032HACA MultiMediaCard Specification Samsung Electronic
8343 MC56U032NACA MultiMediaCard Specification Samsung Electronic
8344 MC56U032NCFA MultiMediaCard Specification Samsung Electronic
8345 MC56U064HACA MultiMediaCard Specification Samsung Electronic
8346 MC56U064NACA MultiMediaCard Specification Samsung Electronic
8347 MC56U128HACA MultiMediaCard Specification Samsung Electronic
8348 MC56U128NACA MultiMediaCard Specification Samsung Electronic
8349 MC56U256HACA MultiMediaCard Specification Samsung Electronic
8350 MC56U256NACA MultiMediaCard Specification Samsung Electronic
8351 MC56U512HACA MultiMediaCard Specification Samsung Electronic
8352 MC56U512NACA MultiMediaCard Specification Samsung Electronic
8353 MJD127 PNP darlington transistor for high DC current gain, 100V, 8A Samsung Electronic
8354 MJD127-1 PNP darlington transistor for high DC current gain, 100V, 8A Samsung Electronic
8355 MJE170 -60 V, -3 A, PNP epitaxial silicon transistor Samsung Electronic
8356 MJE171 -80 V, -1 A, PNP epitaxial silicon transistor Samsung Electronic
8357 MJE172 -100 V, -1 A, PNP epitaxial silicon transistor Samsung Electronic
8358 MJE180 60 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
8359 MJE181 60 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
8360 MJE182 60 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
8361 MJE200 40 V, 5 A, NPN epitaxial silicon transistor Samsung Electronic
8362 MJE210 -40 V, -5 A, PNP epitaxial silicon transistor Samsung Electronic
8363 MJE2955T -70 V, -10 A, PNP silicon transistor Samsung Electronic
8364 MJE3055T 70 V, 10 A, NPN silicon transistor Samsung Electronic
8365 MJE340 300 V, 500 A, NPN epitaxial silicon transistor Samsung Electronic
8366 MJE350 -300 V, -500 A, PNP epitaxial silicon transistor Samsung Electronic
8367 MJE700 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
8368 MJE701 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
8369 MJE702 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
8370 MJE703 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic


Datasheets found :: 9668
Page: | 275 | 276 | 277 | 278 | 279 | 280 | 281 | 282 | 283 |



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