| No. |
Part Name |
Description |
Manufacturer |
| 8341 |
SD1102HD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8342 |
SD1112BD |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8343 |
SD1112CHP |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8344 |
SD1112DD |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8345 |
SD1112HD |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8346 |
SD1113BD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8347 |
SD1113CHP |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8348 |
SD1113DD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8349 |
SD1113HD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8350 |
SD1122BD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8351 |
SD1122CHP |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 8352 |
SD1200CHP |
450 V, 700 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 8353 |
SD1200DD |
450 V, 700 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 8354 |
SD1201BD |
400 V, 500 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 8355 |
SD1201CHP |
400 V, 500 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 8356 |
SD1201DD |
400 V, 500 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 8357 |
SD1202BD |
200 V, 250 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 8358 |
SD1202CHP |
200 V, 250 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 8359 |
SFH4590 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
Siemens |
| 8360 |
SFH4591 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
Siemens |
| 8361 |
SFH4592 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
Siemens |
| 8362 |
SFH4595 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
Siemens |
| 8363 |
SG8002DB |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR |
Epson Company |
| 8364 |
SG8002DC |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR |
Epson Company |
| 8365 |
SGA-2163 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier |
Stanford Microdevices |
| 8366 |
SGA-2186 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 9.3 dB at 1950 MHz. |
Stanford Microdevices |
| 8367 |
SGA-2263 |
DC-5000MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER |
Stanford Microdevices |
| 8368 |
SGA-2286 |
DC-3500 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 14 dB at 1950 MHz. |
Stanford Microdevices |
| 8369 |
SGA-2463 |
DC-2000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 17.1 dB at 1950 MHz. |
Stanford Microdevices |
| 8370 |
SGA-2486 |
DC-2000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 16.7 dB at 1950 MHz. |
Stanford Microdevices |
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