| No. |
Part Name |
Description |
Manufacturer |
| 8341 |
HFM302 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
Rectron Semiconductor |
| 8342 |
HFM303 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
Rectron Semiconductor |
| 8343 |
HFM304 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
Rectron Semiconductor |
| 8344 |
HFM305 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
Rectron Semiconductor |
| 8345 |
HFM306 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
Rectron Semiconductor |
| 8346 |
HFM307 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
Rectron Semiconductor |
| 8347 |
HFM308 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes) |
Rectron Semiconductor |
| 8348 |
HM5116405LTS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
| 8349 |
HM5116405LTS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
| 8350 |
HM5116405LTS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
| 8351 |
HM5117405LTS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
| 8352 |
HM5117405LTS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
| 8353 |
HM5117405LTS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
| 8354 |
HM5117805LTS-5 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
| 8355 |
HM5117805LTS-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
| 8356 |
HM5117805LTS-7 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
| 8357 |
HM628128DLTS-5 |
1 M SRAM (128-kword x 8-bit) |
Hitachi Semiconductor |
| 8358 |
HM628128DLTS-5SL |
1 M SRAM (128-kword x 8-bit) |
Hitachi Semiconductor |
| 8359 |
HM628128DLTS-5UL |
1 M SRAM (128-kword x 8-bit) |
Hitachi Semiconductor |
| 8360 |
HM628128DLTS-7 |
1 M SRAM (128-kword x 8-bit) |
Hitachi Semiconductor |
| 8361 |
HM628128DLTS-7SL |
1 M SRAM (128-kword x 8-bit) |
Hitachi Semiconductor |
| 8362 |
HM628128DLTS-7UL |
1 M SRAM (128-kword x 8-bit) |
Hitachi Semiconductor |
| 8363 |
HM62V8512CLTS-5 |
Memory>Low Power SRAM |
Renesas |
| 8364 |
HM62V8512CLTS-5SL |
Memory>Low Power SRAM |
Renesas |
| 8365 |
HM62V8512CLTS-7 |
Memory>Low Power SRAM |
Renesas |
| 8366 |
HM62V8512CLTS-7SL |
Memory>Low Power SRAM |
Renesas |
| 8367 |
HM62V8512CLTS/CLTS-XXSL |
Low Power SRAMs |
Hitachi Semiconductor |
| 8368 |
HM62V8512CLTS/CLTS-XXSL |
Low Power SRAMs |
Hitachi Semiconductor |
| 8369 |
HSH2501NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
| 8370 |
HSH2510NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
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