| No. |
Part Name |
Description |
Manufacturer |
| 8371 |
ACZRW5252B-G |
Zener Diodes, PD=0.35Watts, VZ=24V |
Comchip Technology |
| 8372 |
ACZRW5253B-G |
Zener Diodes, PD=0.35Watts, VZ=25V |
Comchip Technology |
| 8373 |
ACZRW5254B-G |
Zener Diodes, PD=0.35Watts, VZ=27V |
Comchip Technology |
| 8374 |
ACZRW5255B-G |
Zener Diodes, PD=0.35Watts, VZ=28V |
Comchip Technology |
| 8375 |
ACZRW5256B-G |
Zener Diodes, PD=0.35Watts, VZ=30V |
Comchip Technology |
| 8376 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8377 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8378 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8379 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8380 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8381 |
AEY31 |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 8382 |
AEY31A |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 8383 |
AF15N50 |
50V N-CHANNEL MOSFET |
Diodes |
| 8384 |
AF15N50DNPTR-G1 |
50V N-CHANNEL MOSFET |
Diodes |
| 8385 |
AG01 |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 8386 |
AG01A |
Ultra-Fast-Recovery Rectifier Diodes (600 to 1000V) |
Sanken |
| 8387 |
AG01Y |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 8388 |
AG01Z |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 8389 |
AGP15-400 |
Diodes |
Vishay |
| 8390 |
AGP15-600 |
Diodes |
Vishay |
| 8391 |
AGP15-800 |
Diodes |
Vishay |
| 8392 |
AGP2125K-2.8TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 8393 |
AGP3211KTR-G1 |
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER |
Diodes |
| 8394 |
AGZ431LANTR-G1 |
LOW VOLTAGE (1.24V) ADJUSTABLE PRECISION SHUNT REGULATOR |
Diodes |
| 8395 |
AGZ431LBNTR-G1 |
LOW VOLTAGE (1.24V) ADJUSTABLE PRECISION SHUNT REGULATOR |
Diodes |
| 8396 |
AH173 |
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE |
Diodes |
| 8397 |
AH173-PL-A-A |
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE |
Diodes |
| 8398 |
AH173-PL-A-B |
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE |
Diodes |
| 8399 |
AH173-PL-B-A |
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE |
Diodes |
| 8400 |
AH173-PL-B-B |
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE |
Diodes |
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