| No. |
Part Name |
Description |
Manufacturer |
| 8371 |
2SK3588-01L |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8372 |
2SK3588-01S |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8373 |
2SK3588-01SJ |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8374 |
2SK3589 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8375 |
2SK3589-01 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8376 |
2SK3591 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8377 |
2SK3591 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8378 |
2SK3591-01MR |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8379 |
2SK3596-01L |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8380 |
2SK3597 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8381 |
2SK3606-01 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8382 |
2SK3608 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8383 |
2SK3608-01L |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8384 |
2SK3608-S |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8385 |
2SK3608-SJ |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8386 |
2SK3611 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8387 |
2SK3611-01MR |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8388 |
2SK3679 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 8389 |
2SK3683 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 8390 |
2SK3683-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 8391 |
2SK3875-01 |
Power MOSFET / Super FAP-G Series |
Fuji Electric |
| 8392 |
2SK406 |
Low Noise Ku-K BAND GaAs FET (This NE71083 datasheet is also the datasheet of 2SK406, see the Electrical Characteristics table) |
NEC |
| 8393 |
2SK407 |
Low noise Ku-K band GaAs MESFET for HI REL applications only (This datasheet of NE67383 is also the datasheet of 2SK407, see the Electrical Characteristics table) |
NEC |
| 8394 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 8395 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 8396 |
2SK609 |
Low Noise Ku-K BAND GaAs FET (This NE71084 datasheet is also the datasheet of 2SK609, see the Electrical Characteristics table) |
NEC |
| 8397 |
2SK724 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 8398 |
2SK725 |
N-CHANNEL SILICON POWER MOS-FET |
Fuji Electric |
| 8399 |
2SK727 |
N-Channel Silicon Power MOS-FET |
Fuji Electric |
| 8400 |
2SK727-01 |
N-Channel Silicon Power MOS-FET |
Fuji Electric |
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