| No. |
Part Name |
Description |
Manufacturer |
| 8371 |
ACZRW5242B-G |
Zener Diodes, PD=0.35Watts, VZ=12V |
Comchip Technology |
| 8372 |
ACZRW5243B-G |
Zener Diodes, PD=0.35Watts, VZ=13V |
Comchip Technology |
| 8373 |
ACZRW5244B-G |
Zener Diodes, PD=0.35Watts, VZ=14V |
Comchip Technology |
| 8374 |
ACZRW5245B-G |
Zener Diodes, PD=0.35Watts, VZ=15V |
Comchip Technology |
| 8375 |
ACZRW5246B-G |
Zener Diodes, PD=0.35Watts, VZ=16V |
Comchip Technology |
| 8376 |
ACZRW5248B-G |
Zener Diodes, PD=0.35Watts, VZ=18V |
Comchip Technology |
| 8377 |
ACZRW5250B-G |
Zener Diodes, PD=0.35Watts, VZ=20V |
Comchip Technology |
| 8378 |
ACZRW5251B-G |
Zener Diodes, PD=0.35Watts, VZ=22V |
Comchip Technology |
| 8379 |
ACZRW5252B-G |
Zener Diodes, PD=0.35Watts, VZ=24V |
Comchip Technology |
| 8380 |
ACZRW5253B-G |
Zener Diodes, PD=0.35Watts, VZ=25V |
Comchip Technology |
| 8381 |
ACZRW5254B-G |
Zener Diodes, PD=0.35Watts, VZ=27V |
Comchip Technology |
| 8382 |
ACZRW5255B-G |
Zener Diodes, PD=0.35Watts, VZ=28V |
Comchip Technology |
| 8383 |
ACZRW5256B-G |
Zener Diodes, PD=0.35Watts, VZ=30V |
Comchip Technology |
| 8384 |
AD53513 |
Ultrahigh-speed Quad Pin Driver with High-Z and VTERM Modes |
Analog Devices |
| 8385 |
AD53513JSQ |
Quad Ultrahigh-Speed Pin Driver with High-Z and VTERM Modes |
Analog Devices |
| 8386 |
AD7660 |
16-Bit 100 kSPS CMOS Successive Approximation PulSAR ADC with No Missing Codes |
Analog Devices |
| 8387 |
AD7660ACP |
16-Bit 100 kSPS CMOS Successive Approximation PulSAR® ADC with No Missing Codes |
Analog Devices |
| 8388 |
AD7664 |
16-Bit 570 kSPS CMOS Successive Approximation PulSAR ADC with No Missing Codes |
Analog Devices |
| 8389 |
AD7664ACP |
16-Bit 570 kSPS CMOS Successive Approximation PulSAR® ADC with No Missing Codes |
Analog Devices |
| 8390 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8391 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8392 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8393 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8394 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 8395 |
AEY31 |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 8396 |
AEY31A |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 8397 |
AF15N50 |
50V N-CHANNEL MOSFET |
Diodes |
| 8398 |
AF15N50DNPTR-G1 |
50V N-CHANNEL MOSFET |
Diodes |
| 8399 |
AG01 |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 8400 |
AG01A |
Ultra-Fast-Recovery Rectifier Diodes (600 to 1000V) |
Sanken |
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