| No. |
Part Name |
Description |
Manufacturer |
| 8401 |
MGF1801B |
MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 8402 |
MGF1801BT |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 8403 |
MGF1801BT |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 8404 |
MGF1951A |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
| 8405 |
MGF1951A-01 |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
| 8406 |
MGF2407 |
MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
| 8407 |
MGF2407A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 8408 |
MGF2415A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 8409 |
MGF2430A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 8410 |
MGF2445 |
450 mA Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 8411 |
MGF2445A |
Microwave Power GaAs FET |
Mitsubishi Electric Corporation |
| 8412 |
MGFC1403 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type |
Mitsubishi Electric Corporation |
| 8413 |
MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
Mitsubishi Electric Corporation |
| 8414 |
MHW1815 |
Microwave Bipolar Power Amplifier |
Motorola |
| 8415 |
MHW1815_D |
MHW1815 1805-1880 MHz, 15 W, 26 V, 32 dB RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
| 8416 |
MHW1915 |
Microwave Bipolar Power Amplifier |
Motorola |
| 8417 |
MHW1915_D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
| 8418 |
MHW1916 |
Microwave Bipolar Power Amplifier |
Motorola |
| 8419 |
MIB |
10 x 20 Ta2 N Microwave on Alumina |
Vishay |
| 8420 |
MIC |
20 x 40 Ta2 N Microwave on Alumina |
Vishay |
| 8421 |
MICROWAVE NOTE |
Microwave Semiconductors general explanatory notes |
Philips |
| 8422 |
MICROWAVE NOTE |
Microwave Semiconductors general explanatory notes |
Philips |
| 8423 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 8424 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 8425 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 8426 |
MID |
50 x 50 Ta2 N Microwave on Alumina |
Vishay |
| 8427 |
MIF |
16 x 20 Ta2 N Microwave on Alumina |
Vishay |
| 8428 |
MKB12040WS |
Pulsed Microwave Power NPN Transistor |
Philips |
| 8429 |
MKB12100WS |
Pulsed Microwave Power NPN Transistor |
Philips |
| 8430 |
MKB12140W |
Pulsed Microwave Power NPN Transistor |
Philips |
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