| No. |
Part Name |
Description |
Manufacturer |
| 8401 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 8402 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 8403 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 8404 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 8405 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 8406 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 8407 |
AM82931-055 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 8408 |
AM82931-055N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 8409 |
AM82931-055S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 8410 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 8411 |
AN-261 |
Transistor logarithmic conversion using an integrated operational amplifier - Application Note |
Motorola |
| 8412 |
AN-3749 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 8413 |
AN-3755 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 8414 |
AN-3764 |
Microwave Amplifiers and Oscillators Using the RCA-2N5470 Power Transistor - Application Note |
RCA Solid State |
| 8415 |
AN-4591 |
Use of the RCA-2N6093 HF Power Transistor in Linear Applications - App. Note |
RCA Solid State |
| 8416 |
AN-492 |
Operating characteristics of the MC3000/MC3100 series transistor-transistor logic gates - Application Note |
Motorola |
| 8417 |
AN-493 |
The MC3100/MC3000 series transistor-transistor logic FLIP-FLOPS - Application Note |
Motorola |
| 8418 |
AN-494 |
Transistor-transistor logic lines - Application Note |
Motorola |
| 8419 |
AN-6084 |
High-Power Transistor Microwave Oscillators - Application Note |
RCA Solid State |
| 8420 |
AN-6229 |
Microwave Power-Transistor Reliability as a Function of Current Denisity and Junction Temperature - Application Note |
RCA Solid State |
| 8421 |
AN-6291 |
Microwave Transistor Oscillators - Application Note |
RCA Solid State |
| 8422 |
AN1225 |
RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS |
SGS Thomson Microelectronics |
| 8423 |
AN1263 |
USING THE INTERNAL BOOTSTRAP CHARGE CAPABILITY OF THE L6384, 85 AND 86 IN DRIVING A SIX TRANSISTOR INVERTER BRIDGE |
SGS Thomson Microelectronics |
| 8424 |
AN444 |
TRANSISTOR PROTECTION BY TRANSIL-POWER AND SURGE CURRENT DURATION |
SGS Thomson Microelectronics |
| 8425 |
AN565 |
MEDIAN-TIME-TO-FAILURE (MTF) OF A L-BAND POWER TRANSISTOR UNDER RF CONDITIONS |
SGS Thomson Microelectronics |
| 8426 |
AN587 |
TRANSISTOR PROTECTION BY TRANSIL |
SGS Thomson Microelectronics |
| 8427 |
AN90B00 |
TRANSISTOR ARRAYS |
Panasonic |
| 8428 |
AN90B00S |
TRANSISTOR ARRAYS |
Panasonic |
| 8429 |
AN90B01S |
Transistor Arrays |
Panasonic |
| 8430 |
AN90B10 |
TRANSISTOR ARRAYS |
Panasonic |
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