| No. |
Part Name |
Description |
Manufacturer |
| 841 |
STGWT20V60DF |
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |
ST Microelectronics |
| 842 |
STGWT20V60F |
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed |
ST Microelectronics |
| 843 |
STGWT30H60DFB |
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed |
ST Microelectronics |
| 844 |
STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 845 |
STGWT30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 846 |
STGWT40H60DLFB |
Trench gate field-stop IGBT, HB series 600 V, 40 A high speed |
ST Microelectronics |
| 847 |
STGWT40V60DF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed |
ST Microelectronics |
| 848 |
STGWT40V60DLF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed |
ST Microelectronics |
| 849 |
STGWT60H60DLFB |
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed |
ST Microelectronics |
| 850 |
STGWT60V60DF |
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed |
ST Microelectronics |
| 851 |
STGWT80V60DF |
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed |
ST Microelectronics |
| 852 |
STGWT80V60F |
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed |
ST Microelectronics |
| 853 |
STI10NM60N |
N-channel 600 V, 0.53 Ohm, 10 A, I2PAK MDmesh(TM) II Power MOSFET |
ST Microelectronics |
| 854 |
STI13NM60N |
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAK package |
ST Microelectronics |
| 855 |
STI24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 856 |
STI24NM60N |
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET I2PAK |
ST Microelectronics |
| 857 |
STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package |
ST Microelectronics |
| 858 |
STL10N60M2 |
N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
| 859 |
STL13N60M2 |
N-channel 600 V, 0.39 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT 5x6 HV package |
ST Microelectronics |
| 860 |
STL13NM60N |
N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 861 |
STL18N60M2 |
N-channel 600 V, 0.278 Ohm typ., 9 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package |
ST Microelectronics |
| 862 |
STL18NM60N |
N-channel 600 V, 0.260 Ohm typ., 6 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 863 |
STL23NM60ND |
N-channel 600 V, 0.175 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 864 |
STL24N60M2 |
N-channel 600 V, 0.186 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 865 |
STL24NM60N |
N-channel 600 V, 0.200 Ohm typ., 16 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 866 |
STL26NM60N |
N-channel 600 V, 0.160 Ohm typ., 19 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 867 |
STL33N60M2 |
N-channel 600 V, 0.115 Ohm typ., 21.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 868 |
STL3NM60N |
N-channel 600 V, 1.5 Ohm, 2.2 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 3.3 x 3.3 HV package |
ST Microelectronics |
| 869 |
STL7NM60N |
N-channel 600 V, 0.805 Ohm typ., 5.8 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 5x5 package |
ST Microelectronics |
| 870 |
STL9N60M2 |
N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
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