No. |
Part Name |
Description |
Manufacturer |
841 |
HY51V65163HGJ-6 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
842 |
HY51V65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
843 |
HY51V65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
844 |
HY51V65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
845 |
HY51V65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
846 |
HY51V65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
847 |
HY51V65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
848 |
HY51V65163HGT-45 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
849 |
HY51V65163HGT-5 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
850 |
HY51V65163HGT-6 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
851 |
HY51VS18163HG |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
852 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
853 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
854 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
855 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
856 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
857 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
858 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
859 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
860 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
861 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
862 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
863 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
864 |
HY51VS65163HG |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
865 |
HY51VS65163HGJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
866 |
HY51VS65163HGJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
867 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
868 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
869 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
870 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
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